MADL-0110 series 1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v1 features ? low insertion loss and noise figure ? high peak and average operating power ? various p1db compression powers ? low flat leakage power ? proven reliable, silicon nitride passivation ? rohs compliant ? 3 mil anode contact area description m/a-com technology solutions manufactures a series of silicon pin limiter diodes with small and medium i-region lengths which are specifically designed for high signal applications. the devices are designed to provide low insertion loss, at zero bias, as well as low flat leakage power with fast signal response/recovery times. applications the MADL-0110 series of pin limiter diodes are designed for use in passive limiter control circuits to protect sensitive receiver components such as low noise amplifiers (lna), detectors, and mixers covering the 10 mhz to 18 ghz frequency range. parameter absolute maximum forward current 100ma operating temperature -55c to +125c storage temperature -55c to +150c junction temperature +175c rf peak & c.w. incident power per performance table mounting temperature +320c for 10 sec. absolute maximum ratings 1 t amb = 25c (unless otherwise specified) note: 1. exceeding any of the above ratings may cause permanent damage. ods dimension mils mm a 15 2 .381 .51 c 7 1 * .178 .025 134 b 3 0.076 anode a square c full area cathode chip outline b
MADL-0110 series 2 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v1 * nominal high signal performance at t amb = 25c part number incident peak power for 1db limiting freq. = 9.4ghz dbm incident peak power for 10db limiting freq. = 9.4ghz dbm incident peak power for 15db limiting freq. = 9.4ghz dbm recovery time 3 db peak power = 50w ns maximum incident peak power watts maximum cw input power watts MADL-011009-01340w 8 31 41 10 90 3 MADL-011010-01340w 11 34 44 25 125 4 MADL-011011-01340w 15 38 50 75 200 5 * see page 3 for high signal performance parameter notes. un-packaged die electrical specifications at t amb = 25c part number 1 minimum v rev 10 a v r maximum v rev 10 a v r minimum c j0v 1 mhz pf maximum c j0v 1 mhz pf maximum r s 10ma 500 mhz ohms 2 nominal characteristics carrier lifetime i for =10ma i rev = -6ma ns 2 i-region thickness m contact diameter mils thermal resistance c/w 1 MADL-011009-01340w 20 35 0.16 0.23 1.50 10 2 3.0 175 MADL-011010-01340w 30 50 0.17 0.24 1.50 15 3 3.0 150 MADL-011011-01340w 60 75 0.05 0.17 2.30 10 4 3.0 150 note: 1. for other available lim iter devices consult the ma4l series limiter datasheet. 2. test performed with the chip mounted in an ods-30 package.
MADL-0110 series 3 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v1 typical high signal peak power pe rformance in a single shunt 50 ? circuit high signal performance : measured in a single shunt diode (die) c onfiguration attached directly to the gold plated rf ground of a 50 ? , sma connectorized, test fixture using 2 mil thick conductive silver epoxy . chip anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick rogers 5880 duroid microstrip trace. a shun t coil provides the d.c. return. test frequency = 9.4 ghz rf pulse width = 1.0 s, 0.001% duty cycle. *refer to note 3 typical peak power performance for single shunt limiter in a 50 ? system frequency = 9.4ghz, pulse width = 1s, duty cycle = .001%
MADL-0110 series 4 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v1 application circuits typical +60dbm peak power, 1s p.w., 0.001% duty cycle, +20dbm flat leakage limiter circuit rf output ma4l401-134 rf input ma4l101-134 MADL-011010-01340w coil: d.c. return transmission line: 90o @ fo transmission line: 90o @ fo rf output rf input MADL-011009-01340w coil: d.c. return transmission line: 90o @ fo typical +50dbm peak power, 1s p.w., 0.001% duty cycle, +20dbm flat leakage limiter circuit MADL-011010-01340w
MADL-0110 series 5 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v1 notes for specification and nominal high signal performance tables: 1) maximum series resistance : r s , is measured at 500 mhz in the ods-30 package and is equivalent to the total diode resistance: r s = rj (chip junction resistance) + r o (package ohmic resistance) 2) nominal c.w. thermal resistance : ? th is measured in a ceramic pill package, ods-30, mounted to a metal (infinite) heatsink. chip only thermal resistan ce values are approximately 2c/w less than the ods-30 listed package values in the specifications table. 3) maximum high signal performance : measured with a single shunt diode (d ie) attached directly to the gold plated rf housing ground with 2 mil thick conductive silver epoxy in a 50 ? , sma, connectorized test fixture. chip anode contact is thermo-compression wire bonded us ing a 1 mil. diameter gold wire onto a 7.2 mil thick rogers 5880 duroid microstrip trace. a shunt coil provides the d.c. return. test frequency = 9.4 ghz, rf pulse width = 1.0 s, duty cycle = 0.001%. 4) maximum c.w. incident power : measured in a 50 ? , sma, connectorized housing @ 4ghz utilizing a twt amplifier and the same single diode asse mbly configuration as stated in note 3 above. die handling and mounting information handling: all semiconductor chips should be handled with care in order to avoid damage or contamination from perspiration, salts, and skin oils. for individual di e, the use of plastic tipped tweezers or vacuum pick up tools is strongly recommended. bulk handling should ensur e that abrasion and mechanical shock are minimized. die attach: the die have ti-pt-au back and anode metal, with a final gold thickness of 1.0m. die can be mounted with a gold-tin, eutectic sol der perform or conductive silver epoxy. the metal rf and d.c. ground plane mounting surface must be free of contamination and should have a surface flatness or < 0.002?. ? eutectic die attachment using hot gas die bonder: an 80/20, gold / tin eutectic solder perform is recommended with a work surface temperature of 255 c and a tool tip temperature of 220c. when the hot gas is applied, the temperature at the tool tip should be approximately 290c. the chip should not be exposed to a temperatures in excess of 320c for more than 10 seconds. ? eutectic die attachment using reflow oven: refer to application note m538 , ?surface mounting instructions?. ? epoxy die attachment: a thin, controlled amount of electrically conductive silver epoxy should be applied, approximately 1-2 mils thick to minimize ohmic and t hermal resistances. a small epoxy fillet should be visible around the outer perimeter of the chip after placement to ensure full area coverage. cure the conductive silver epoxy per the manufacturer?s schedule, typically 150 ? c for 1 hour. wire bonding: the chip?s anode metallization stack is compris ed of ti/pt/au with a final gold thickness of 1.0m. thermo-compression wedge bonding using a .7 to 1 mil diameter gold wire is recommended. the heat stage temperature should be set to approximately 200c with a bonding tip temperature of 125 ? c and a force of 18 to 40 grams. use of ultrasonic energy is not advised but if necessary it should be adjusted to the minimum required to achieve a good bond. excessive energy or force applied to the top contact will cause the metallization to dislodge and lift off. automatic ball bonding may also be used. s ee application note m541 , ?bonding and handling procedures for chip diode devices? for more detailed handling and assembly information.
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